3rd III-V-MOS Newsletter released
Compound Semiconductor Industry Innovation awards 2017
The Innovation Award was received by IBM for research on using high mobility materials into silicon CMOS technology to scale below 7 nanometers (nm)
Coordinators of III-V-MOS and INSIGHT exchange visits to project progress meetings in Modena and Cork
To advance the collaboration between III-V-MOS and and other important consortia in the European III-V semiconductor on Silicon research field, III-V MOS and INSIGHT coordinators exchanged visits at the respective Project progress meetings held in Modena, Italy on on March31-April1, 2016 (for III-V-MOS) and Cork, Ireland on November 17-18, 2016 (for INSIGHT). Each coordinator could deliver a presentation of its project in an open atmosphere for discussion, and received burning scientific questions from the audience. Topics for discussion have been the role of parasitics and tapering of the access regions to improve nanowire performance, dispersive effects at extremely high (GHz) frequencies and their relation to conduction band traps, intterpretation of C-V curves in innovative III-V MOS sistems.