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June 2017
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Consortium area
Breaking News

Breaking News

 

3rd III-V-MOS Newsletter released

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Compound Semiconductor  Industry Innovation awards 2017

 

The Innovation Award was received by IBM for research on using high mobility materials into silicon CMOS technology to scale below 7 nanometers (nm)

 

More information: https://www.ibm.com/blogs/research/2017/03/ibm-researchers-take-home-innovation-prize-semiconductor-research/

 

 

Coordinators of III-V-MOS and INSIGHT exchange visits to project progress meetings in Modena and Cork

 

To advance the collaboration between III-V-MOS and and other important consortia in the European III-V semiconductor on Silicon research field, III-V MOS and INSIGHT coordinators exchanged visits at the respective Project progress meetings held in Modena, Italy on on March31-April1, 2016 (for III-V-MOS) and Cork, Ireland on November 17-18, 2016 (for INSIGHT). Each coordinator could deliver a presentation of its project in an open atmosphere for discussion, and received burning scientific questions from the audience. Topics for discussion have been the role of parasitics and tapering of the access regions to improve nanowire performance, dispersive effects at extremely high (GHz) frequencies and their relation to conduction band traps, intterpretation of C-V curves in innovative III-V MOS sistems.